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FDC610PZ - P-Channel MOSFET

General Description

This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • Max rDS(on) = 42mΩ at VGS =.
  • 10V, ID =.
  • 4.9A.
  • Max rDS(on) = 75mΩ at VGS =.
  • 4.5V, ID =.
  • 3.7A.
  • Low gate charge (17nC typical).
  • High performance trench technology for extremely low rDS(on).
  • SuperSOTTM.
  • 6 package: small footprint (72% smaller than standard SO.
  • 8) low profile (1mm thick).
  • RoHS Compliant General.

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Datasheet Details

Part number FDC610PZ
Manufacturer onsemi
File Size 443.38 KB
Description P-Channel MOSFET
Datasheet download datasheet FDC610PZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC610PZ P-Channel PowerTrench® MOSFET FDC610PZ P-Channel PowerTrench® MOSFET –30V, –4.9A, 42mΩ Features „ Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A „ Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A „ Low gate charge (17nC typical). „ High performance trench technology for extremely low rDS(on). „ SuperSOTTM –6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick). „ RoHS Compliant General Description This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.