Description
This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- Max rDS(on) = 42mΩ at VGS =.
- 10V, ID =.
- 4.9A.
- Max rDS(on) = 75mΩ at VGS =.
- 4.5V, ID =.
- 3.7A.
- Low gate charge (17nC typical).
- High performance trench technology for extremely low rDS(on).
- SuperSOTTM.
- 6 package: small footprint (72% smaller than
standard SO.
- 8) low profile (1mm thick).
- RoHS Compliant
General.
FDC610PZ Datasheet
