FDC610PZ mosfet equivalent, p-channel mosfet.
* Max rDS(on) = 42mΩ at VGS =
–10V, ID =
–4.9A
* Max rDS(on) = 75mΩ at VGS =
–4.5V, ID =
–3.7A
load switching and power management, battery charging circuits, and DC/DC conversion.
Application
* DC - DC Convers.
This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well.
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